Prof. Lin Lanying, a CAS member and semiconductor expert, died of illness at 85 on March 4, 2003 in Beijing.
Prof. Lin graduated from Christian University in south China' s Fujian Province in 1940 and obtained her Ph.D. degree from the US University of Pennsylvania in 1955. As a pioneer in the China's semiconductor endeavors, Lin laid a solid foundation for the development of microelectronics and optoelectronics in this country by taking charge of developing China' s first crystals of silicon, indium antimonide, gallium arsenide, and gallium phosphide. The high-purity vaporphase epitaxy and liquid-phase epitaxy materials developed and fabricated under her leadership reached international advanced level. She also pioneered the new research domain of micro-gravitational semiconductor materials and attained outstanding achievements in research on space growth of gallium arsenide crystal and its property.
Prof. Lin was elected CAS member in 1980.