Scientists at the Institute of Microelectronics have been dedicated to the systematic and in-depth study of novel memory mechanisms, device materials, structural systems, performance modulation laws, reliability characterization, and integration technologies.

They have achieved a series of original scientific and technological achievements, including the mechanism model of resistive random access memories (RRAM), three-dimensional (3D) integration of RRAM, and material/structure optimization of charge trapping memory and micro-characterization of the device reliability.

These achievements contributed to new storage devices and integrated solutions with independent intellectual property rights. Key invention patents and technological research achievements have been transferred to renowned domestic integrated circuit manufacturing enterprises, making significant contributions to the development of China’s storage device industry.