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Researchers Modulate Polaron Mobility in Black Phase α-FAPbI3 by Bandgap Engineering

Sep 16, 2022

Researchers from Shanghai Institute of Optics and Fine Mechanics (SIOM) of the Chinese Academy of Sciences (CAS) and Chongqing University proved that besides the optimal bandgap in α-FAPbI3, the higher polaron mobility induced by the lattice distortion due to A-X co-substitution modulation could also result in the outstanding solar energy conversion performance. This study has been published in Journal of Energy Chemistry. 

Recent years have witnessed a surge of researches pertaining to the improvement of the photoelectric conversion efficiency of solar cells. The cutting-edge researches on low-cost and high-efficiency solar cells will provide an important theoretical and experimental basis for China to achieve carbon neutrality by 2060. 

In this study, researchers first investigated the ultrafast photogenerated carrier dynamics of the black cubic phase α-FAPbI3 thin films using time-resolved terahertz spectroscopy. The bandgap was tuned by component substitution through bandgap engineering, and it was found that the polaron mobility of the sample with a smaller bandgap is larger.

Then, by analyzing the dispersion relationship of the THz photoconductivity of photogenerated carriers, they found that the larger polaron mobility of the sample with smaller band gap is mainly due to the longer scattering time of the carrier. 

The findings of this study provide an important research basis for device design to further improve the efficiency of perovskite solar cells. 

Contact

WU Xiufeng

Shanghai Institute of Optics and Fine Mechanics

E-mail:

Polaron mobility modulation by bandgap engineering in black phase α-FAPbI3

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